NTP52N10
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onsemi NTP52N10

Manufacturer No:
NTP52N10
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTP52N10 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 60A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:60A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:30mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number NTP52N10 NTP52N10G  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta) 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 26A, 10V 30mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V 135 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3150 pF @ 25 V 3150 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 214W (Tc) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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