NTP360N80S3Z
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onsemi NTP360N80S3Z

Manufacturer No:
NTP360N80S3Z
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTP360N80S3Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 13A TO220-3
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:3.8V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:25.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1143 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number NTP360N80S3Z NTPF360N80S3Z  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 6.5A, 10V 360mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.8V @ 300µA 3.8V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 25.3 nC @ 10 V 25.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1143 pF @ 400 V 1143 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 96W (Tc) 31W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220FP
Package / Case TO-220-3 TO-220-3 Full Pack

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