onsemi-NTP011N15MC - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	150 V
Current - Continuous Drain (Id) @ 25°C:	9.8A (Ta), 74.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	10.9mOhm @ 41A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 223µA
Gate Charge (Qg) (Max) @ Vgs:	37 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2810 pF @ 75 V
FET Feature:	-
Power Dissipation (Max):	2.4W (Ta), 136.4W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220
Package / Case:	TO-220-3

onsemi NTP011N15MC