onsemi-NTNS3C94NZT5G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12 V
Current - Continuous Drain (Id) @ 25°C:	384mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	480mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.6 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	35 pF @ 9.6 V
FET Feature:	-
Power Dissipation (Max):	120mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	3-XLLGA (0.62x0.62)
Package / Case:	3-XFDFN

onsemi NTNS3C94NZT5G