onsemi-NTMTSC002N10MCTXG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	45A (Ta), 236A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:	4V @ 520µA
Gate Charge (Qg) (Max) @ Vgs:	89 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6305 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	9W (Ta), 255W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount, Wettable Flank
Supplier Device Package:	8-TDFNW (8.3x8.4)
Package / Case:	8-PowerTDFN

onsemi NTMTSC002N10MCTXG