NTMSD3P102R2G
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onsemi NTMSD3P102R2G

Manufacturer No:
NTMSD3P102R2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTMSD3P102R2G Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 2.34A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 16 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):730mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number NTMSD3P102R2G NTMSD3P102R2SG   NTMSD3P102R2  
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.34A (Ta) 2.34A (Ta) 2.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 3.05A, 10V 85mOhm @ 3.05A, 10V 85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 25 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 16 V 750 pF @ 16 V 750 pF @ 16 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 730mW (Ta) 730mW (Ta) 730mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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