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| Part Number | NTMSD2P102R2SG | NTMSD3P102R2SG |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Product Status | Obsolete | Obsolete |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) | 2.34A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 4.5V | 85mOhm @ 3.05A, 10V |
| Vgs(th) (Max) @ Id | - | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V | 25 nC @ 10 V |
| Vgs (Max) | - | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 16 V | 750 pF @ 16 V |
| FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) |
| Power Dissipation (Max) | - | 730mW (Ta) |
| Operating Temperature | - | - |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | 8-SOIC | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
