NTMS4N01R2G
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onsemi NTMS4N01R2G

Manufacturer No:
NTMS4N01R2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTMS4N01R2G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 3.3A 8SOIC
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):770mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number NTMS4N01R2G NTMS4N01R2  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 40mOhm @ 4.2A, 4.5V 40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V -
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 770mW (Ta) 770mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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