NTMS4176PR2G
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onsemi NTMS4176PR2G

Manufacturer No:
NTMS4176PR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTMS4176PR2G Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 5.5A 8SOIC
Delivery:
Payment:
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iso45001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1720 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):810mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number NTMS4176PR2G NTMS4177PR2G  
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta) 6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 9.6A, 10V 12mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 55 nC @ 10 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1720 pF @ 24 V 3100 pF @ 24 V
FET Feature - -
Power Dissipation (Max) 810mW (Ta) 840mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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