onsemi-NTMS4101PR2 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	19mOhm @ 6.9A, 4.5V
Vgs(th) (Max) @ Id:	450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:	32 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	3200 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1.38W (Tj)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)

onsemi NTMS4101PR2