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| Part Number | NTMS10P02R2 | NTMS10P02R2G |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Product Status | Obsolete | Active |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) | 8.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 10A, 4.5V | 14mOhm @ 10A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 4.5 V | 70 nC @ 4.5 V |
| Vgs (Max) | ±12V | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 3640 pF @ 16 V | 3640 pF @ 16 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 1.6W (Ta) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | 8-SOIC | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
