NTMFS5C646NLT3G
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onsemi NTMFS5C646NLT3G

Manufacturer No:
NTMFS5C646NLT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTMFS5C646NLT3G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 20A/93A 5DFN
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2164 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.7W (Ta), 79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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$1.18
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Similar Products

Part Number NTMFS5C646NLT3G NTMFS5C645NLT3G   NTMFS5C646NLT1G  
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 93A (Tc) 22A (Ta), 100A (Tc) 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 50A, 10V 4mOhm @ 50A, 10V 4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.7 nC @ 10 V 34 nC @ 10 V 33.7 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2164 pF @ 25 V 2200 pF @ 50 V 2164 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.7W (Ta), 79W (Tc) 3.7W (Ta), 79W (Tc) 3.7W (Ta), 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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