onsemi-NTMFS4D2N10MDT1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	16.4A (Ta), 113A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	4.3mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:	4V @ 239µA
Gate Charge (Qg) (Max) @ Vgs:	60 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3100 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	2.8W (Ta), 132W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN, 5 Leads

onsemi NTMFS4D2N10MDT1G