onsemi-NTMFS4C10NT1G-001 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	8.2A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	18.6 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	987 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	750mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN, 5 Leads

onsemi NTMFS4C10NT1G-001