NTMFS4C10NBT1G
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onsemi NTMFS4C10NBT1G

Manufacturer No:
NTMFS4C10NBT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTMFS4C10NBT1G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 16.4A/46A 5DFN
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:16.4A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:987 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.51W (Ta), 23.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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$1.43
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Similar Products

Part Number NTMFS4C10NBT1G NTMFS4C10NT1G   NTMFS4C10NBT3G  
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 16.4A (Ta), 46A (Tc) 8.2A (Ta) 16.4A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.95mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.6 nC @ 10 V 9.7 nC @ 4.5 V 18.6 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 987 pF @ 15 V 987 pF @ 15 V 987 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.51W (Ta), 23.6W (Tc) 750mW (Ta), 23.6W (Tc) 2.51W (Ta), 23.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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