NTMFS4C09NT1G-001
  • Share:

onsemi NTMFS4C09NT1G-001

Manufacturer No:
NTMFS4C09NT1G-001
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTMFS4C09NT1G-001 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 9A/52A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1252 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):760mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

-
482

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTMFS4C09NT1G-001 NTMFS4C05NT1G-001   NTMFS4C06NT1G-001   NTMFS4C08NT1G-001  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Discontinued at Digi-Key Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 52A (Tc) 11.9A (Ta), 78A (Tc) 11A (Ta), 69A (Tc) 9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.2V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.2 nC @ 10 V 14 nC @ 4.5 V 26 nC @ 10 V 18.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1252 pF @ 15 V 1972 pF @ 15 V 1683 pF @ 15 V 1670 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 760mW (Ta) 770mW (Ta) 770mW (Ta) 760mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

STS11NF30L
STS11NF30L
STMicroelectronics
MOSFET N-CH 30V 11A 8SO
STL16N60M2
STL16N60M2
STMicroelectronics
MOSFET N-CH 600V 8A POWERFLAT HV
STFI7N80K5
STFI7N80K5
STMicroelectronics
MOSFET N-CH 800V 6A I2PAKFP
IPAN60R180P7SXKSA1
IPAN60R180P7SXKSA1
Infineon Technologies
MOSFET 600V TO220 FULL PACK
DMT2004UFDF-7
DMT2004UFDF-7
Diodes Incorporated
MOSFET N-CH 24V 14.1A 6UDFN
IXFB70N100X
IXFB70N100X
IXYS
MOSFET N-CH 1000V 70A PLUS264
SIUD402ED-T1-GE3
SIUD402ED-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 1A PPAK 0806
IRFRC20
IRFRC20
Vishay Siliconix
MOSFET N-CH 600V 2A DPAK
NTD4808N-35G
NTD4808N-35G
onsemi
MOSFET N-CH 30V 10A/63A IPAK
SI4829DY-T1-GE3
SI4829DY-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 2A 8SO
AOTF10N90
AOTF10N90
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 900V 10A TO220-3F
IPA80R1K4CEXKSA1
IPA80R1K4CEXKSA1
Infineon Technologies
MOSFET N-CH 800V 2.8A TO220

Related Product By Brand

MURD320T4G
MURD320T4G
onsemi
DIODE GEN PURP 200V 3A DPAK
BAS29_S00Z
BAS29_S00Z
onsemi
DIODE GEN PURP 120V 200MA SOT23
MMSZ5262BT1G
MMSZ5262BT1G
onsemi
DIODE ZENER 51V 500MW SOD123
NCN7200MTTWG
NCN7200MTTWG
onsemi
IC MUX/DEMUX OCTAL 1X2 42WQFN
MC33502PG
MC33502PG
onsemi
IC OPAMP GP 2 CIRCUIT 8DIP
NC7SZ00M5X
NC7SZ00M5X
onsemi
IC GATE NAND 1CH 2-INP SOT23-5
NLV74HC14ADTG
NLV74HC14ADTG
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
MC100H602FN
MC100H602FN
onsemi
IC TRNSLTR UNIDIRECTIONAL 28PLCC
MC33464H-27AT1
MC33464H-27AT1
onsemi
IC SUPERVISOR PWR SUP SUPPORT
NCP5661DT12RKG
NCP5661DT12RKG
onsemi
IC REG LINEAR 1.2V 1A DPAK-5
MOC8030W
MOC8030W
onsemi
OPTOISO 5.3KV DARLINGTON 6-DIP
MOC81013S
MOC81013S
onsemi
OPTOISOLATOR 5.3KV TRANS 6-SMD