NTMFS4C06NT1G-001
  • Share:

onsemi NTMFS4C06NT1G-001

Manufacturer No:
NTMFS4C06NT1G-001
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTMFS4C06NT1G-001 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 11A/69A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1683 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):770mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

-
61

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTMFS4C06NT1G-001 NTMFS4C09NT1G-001   NTMFS4C08NT1G-001   NTMFS4C05NT1G-001  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 69A (Tc) 9A (Ta), 52A (Tc) 9A (Ta), 52A (Tc) 11.9A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 10V 5.8mOhm @ 30A, 10V 5.8mOhm @ 18A, 10V 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 22.2 nC @ 10 V 18.2 nC @ 10 V 14 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1683 pF @ 15 V 1252 pF @ 15 V 1670 pF @ 15 V 1972 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 770mW (Ta) 760mW (Ta) 760mW (Ta) 770mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

IRFB17N50LPBF
IRFB17N50LPBF
Vishay Siliconix
MOSFET N-CH 500V 16A TO220AB
SIHA30N60AEL-GE3
SIHA30N60AEL-GE3
Vishay Siliconix
MOSFET N-CH 600V 28A TO220
PMV40UN2R
PMV40UN2R
Nexperia USA Inc.
MOSFET N-CH 30V 3.7A TO236AB
FDMS5672
FDMS5672
onsemi
MOSFET N-CH 60V 10.6A/22A 8MLP
IXTA80N10T
IXTA80N10T
IXYS
MOSFET N-CH 100V 80A TO263
IPA60R160P7XKSA1
IPA60R160P7XKSA1
Infineon Technologies
MOSFET N-CH 600V 20A TO220
NTMFS6H864NLT1G
NTMFS6H864NLT1G
onsemi
MOSFET N-CH 80V 7A/22A 5DFN
APT6011B2VRG
APT6011B2VRG
Microchip Technology
MOSFET N-CH 600V 49A T-MAX
IRF820STRL
IRF820STRL
Vishay Siliconix
MOSFET N-CH 500V 2.5A D2PAK
SI7160DP-T1-GE3
SI7160DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 20A PPAK SO-8
AO4447AL_104
AO4447AL_104
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 18.5A 8SOIC
PMN45EN,165
PMN45EN,165
NXP USA Inc.
MOSFET N-CH 30V 5.2A 6TSOP

Related Product By Brand

SS28
SS28
onsemi
DIODE SCHOTTKY 80V 2A DO214AA
MURH8100E
MURH8100E
onsemi
RECTIFIER, AVALANCHE, 4A, 1000V,
S115FP
S115FP
onsemi
DIODE SCHOTTKY 150V 1A SOD123HE
BZX84C6V2ET1
BZX84C6V2ET1
onsemi
DIODE ZENER 6.2V 225MW SOT23-3
MPS6717G
MPS6717G
onsemi
TRANS NPN 80V 0.5A TO92
2N5089TFR
2N5089TFR
onsemi
TRANS NPN 25V 0.1A TO92-3
NTD4858NA-1G
NTD4858NA-1G
onsemi
MOSFET N-CH 25V 11.2A/73A IPAK
AP0201AT2L00XEGA0-DR
AP0201AT2L00XEGA0-DR
onsemi
IC VID IMAGE SGNL PROC 100VFBGA
FPF1321BUCX
FPF1321BUCX
onsemi
IC PWR SWITCH P-CHAN 2:1 6WLCSP
NCP304LSQ46T1G
NCP304LSQ46T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC82AB
UC3845BVDR2G
UC3845BVDR2G
onsemi
IC REG CTRLR BOOST/FLYBK 14SOIC
NCP5201MNG
NCP5201MNG
onsemi
IC REG CTRLR DDR 2OUT 18DFN