NTMFS4C027NT1G
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onsemi NTMFS4C027NT1G

Manufacturer No:
NTMFS4C027NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTMFS4C027NT1G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 16.4A/52A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:16.4A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.51W (Ta), 25.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Part Number NTMFS4C027NT1G NTMFS4C029NT1G   NTMFS4C028NT1G   NTMFS4C027NT3G   NTMFS4C020NT1G   NTMFS4C022NT1G   NTMFS4C024NT1G   NTMFS4C025NT1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 16.4A (Ta), 52A (Tc) 15A (Ta), 46A (Tc) 16.4A (Ta), 52A (Tc) 16.4A (Ta), 52A (Tc) 47A (Ta), 303A (Tc) 30A (Ta), 136A (Tc) 21.7A (Ta), 78A (Tc) 20A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 18A, 10V 5.88mOhm @ 30A, 10V 4.73mOhm @ 30A, 10V 4.8mOhm @ 18A, 10V 0.7mOhm @ 30A, 10V 1.7mOhm @ 30A, 10V 2.8mOhm @ 30A, 10V 3.41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.2V @ 250µA 2.1V @ 250µA 2.1V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V 18.6 nC @ 10 V 22.2 nC @ 10 V 18.2 nC @ 10 V 139 nC @ 10 V 45.2 nC @ 10 V 30 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 15 V 987 pF @ 15 V 1252 pF @ 15 V 1670 pF @ 15 V 10144 pF @ 15 V 3071 pF @ 15 V 1972 pF @ 15 V 1683 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.51W (Ta), 25.5W (Tc) 2.49W (Ta), 23.6W (Tc) 2.51W (Ta), 25.5W (Tc) 2.51W (Ta), 25.5W (Tc) 3.2W (Ta), 134W (Tc) 3.1W (Ta), 64W (Tc) 2.57W (Ta), 33W (Tc) 2.55W (Ta), 30.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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