NTMFS4941NT3G
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onsemi NTMFS4941NT3G

Manufacturer No:
NTMFS4941NT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTMFS4941NT3G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 9A/47A 5DFN
Delivery:
Payment:
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iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1650 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):910mW (Ta), 25.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS4941NT3G NTMFS4945NT3G   NTMFS4943NT3G   NTMFS4946NT3G   NTMFS4841NT3G   NTMFS4921NT3G   NTMFS4931NT3G   NTMFS4941NT1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V -
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 47A (Tc) 7.4A (Ta), 35A (Tc) 8.3A (Ta), 41A (Tc) 12.7A (Ta), 100A (Tc) 8.3A (Ta), 57A (Tc) 8.8A (Ta), 58.5A (Tc) 23A (Ta), 246A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 6.2mOhm @ 30A, 10V 9mOhm @ 30A, 10V 7.2mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V 7mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V 1.1mOhm @ 30A, 10V -
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 25.5 nC @ 10 V 17.6 nC @ 10 V 20.9 nC @ 10 V 53 nC @ 11.5 V 17 nC @ 4.5 V 25 nC @ 11.5 V 128 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1650 pF @ 15 V 1205 pF @ 15 V 1401 pF @ 15 V 3250 pF @ 12 V 1436 pF @ 12 V 1400 pF @ 12 V 9821 pF @ 15 V -
FET Feature - - - - - - - -
Power Dissipation (Max) 910mW (Ta), 25.5W (Tc) 910mW (Ta), 19.8W (Tc) 910mW (Ta), 22.3W (Tc) 890mW (Ta), 55.5W (Tc) 870mW (Ta), 41.7W (Tc) 870mW (Ta), 38.5W (Tc) 950mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) -
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads -

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