NTMFS4839NT3G
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onsemi NTMFS4839NT3G

Manufacturer No:
NTMFS4839NT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTMFS4839NT3G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 9.5A/64A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1588 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):870mW (Ta), 41.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS4839NT3G NTMFS4849NT3G   NTMFS4939NT3G   NTMFS4833NT3G   NTMFS4834NT3G   NTMFS4835NT3G   NTMFS4836NT3G   NTMFS4837NT3G   NTMFS4839NHT3G   NTMFS4839NT1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 64A (Tc) 10.2A (Ta), 71A (Tc) 9.3A (Ta), 53A (Tc) 16A (Ta), 156A (Tc) 13A (Ta), 130A (Tc) 13A (Ta), 130A (Tc) 11A (Ta), 90A (Tc) 10A (Ta), 74A (Tc) 9.5A (Ta), 64A (Tc) 9.5A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 30A, 10V 5.1mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V 2mOhm @ 30A, 10V 3mOhm @ 30A, 10V 3.5mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V 22 nC @ 4.5 V 28.5 nC @ 10 V 88 nC @ 11.5 V 48 nC @ 4.5 V 52 nC @ 11.5 V 28 nC @ 4.5 V 22 nC @ 4.5 V 43.5 nC @ 11.5 V 18 nC @ 4.5 V
Vgs (Max) ±20V ±16V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1588 pF @ 12 V 2040 pF @ 12 V 1954 pF @ 15 V 5600 pF @ 12 V 4500 pF @ 12 V 3100 pF @ 12 V 2677 pF @ 12 V 2048 pF @ 12 V 2354 pF @ 12 V 1588 pF @ 12 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 870mW (Ta), 41.7W (Tc) 870mW (Ta), 42.4W (Tc) 920mW (Ta), 30W (Tc) 910mW (Ta), 125W (Tc) 900mW (Ta), 86.2W (Tc) 890mW (Ta), 62.5W (Tc) 890mW (Ta), 55.6W (Tc) 880mW (Ta), 47.2W (Tc) 870mW (Ta), 42.4W (Tc) 870mW (Ta), 41.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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