NTMFS4835NT3G
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onsemi NTMFS4835NT3G

Manufacturer No:
NTMFS4835NT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTMFS4835NT3G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 13A/130A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 11.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):890mW (Ta), 62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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$0.39
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Part Number NTMFS4835NT3G NTMFS4836NT3G   NTMFS4837NT3G   NTMFS4839NT3G   NTMFS4845NT3G   NTMFS4935NT3G   NTMFS4833NT3G   NTMFS4834NT3G   NTMFS4835NT1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 130A (Tc) 11A (Ta), 90A (Tc) 10A (Ta), 74A (Tc) 9.5A (Ta), 64A (Tc) 13.7A (Ta), 115A (Tc) 13A (Ta), 93A (Tc) 16A (Ta), 156A (Tc) 13A (Ta), 130A (Tc) 13A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V 2.9mOhm @ 30A, 10V 3.2mOhm @ 30A, 10V 2mOhm @ 30A, 10V 3mOhm @ 30A, 10V 3.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 11.5 V 28 nC @ 4.5 V 22 nC @ 4.5 V 18 nC @ 4.5 V 62 nC @ 11.5 V 49.4 nC @ 10 V 88 nC @ 11.5 V 48 nC @ 4.5 V 52 nC @ 11.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±16V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 12 V 2677 pF @ 12 V 2048 pF @ 12 V 1588 pF @ 12 V 3720 pF @ 12 V 4850 pF @ 15 V 5600 pF @ 12 V 4500 pF @ 12 V 3100 pF @ 12 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 890mW (Ta), 62.5W (Tc) 890mW (Ta), 55.6W (Tc) 880mW (Ta), 47.2W (Tc) 870mW (Ta), 41.7W (Tc) 890mW (Ta), 62.5W (Tc) 930mW (Ta), 48W (Tc) 910mW (Ta), 125W (Tc) 900mW (Ta), 86.2W (Tc) 890mW (Ta), 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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