onsemi-NTMFS0D8N02P1ET1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	55A (Ta), 365A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	0.68mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:	2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:	52 nC @ 4.5 V
Vgs (Max):	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:	8600 pF @ 13 V
FET Feature:	-
Power Dissipation (Max):	3.2W (Ta), 139W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN, 5 Leads

onsemi NTMFS0D8N02P1ET1G