onsemi-NTMFD6H852NLT1G - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	-
Drain to Source Voltage (Vdss):	80V
Current - Continuous Drain (Id) @ 25°C:	295mA
Rds On (Max) @ Id, Vgs:	1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	26pF @ 20V
Power - Max:	250mW (Ta)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6) Dual Flag (SO8FL-Dual)

onsemi NTMFD6H852NLT1G