onsemi-NTMD6601NR2G - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	80V
Current - Continuous Drain (Id) @ 25°C:	1.1A
Rds On (Max) @ Id, Vgs:	215mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	400pF @ 25V
Power - Max:	600mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

onsemi NTMD6601NR2G