NTLUS3192PZTAG
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onsemi NTLUS3192PZTAG

Manufacturer No:
NTLUS3192PZTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTLUS3192PZTAG Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 2.2A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:85mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):600mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFN (1.6x1.6)
Package / Case:6-PowerUFDFN
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Similar Products

Part Number NTLUS3192PZTAG NTLUS3192PZTBG  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 85mOhm @ 3A, 4.5V 86mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V 8.5 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 10 V 450 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 600mW (Ta) 600mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-UDFN (1.6x1.6) 6-UDFN (1.6x1.6)
Package / Case 6-PowerUFDFN 6-PowerUFDFN

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