NTLUF4189NZTBG
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onsemi NTLUF4189NZTBG

Manufacturer No:
NTLUF4189NZTBG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTLUF4189NZTBG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 1.2A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:200mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:95 pF @ 15 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFN (1.6x1.6)
Package / Case:6-UFDFN Exposed Pad
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Similar Products

Part Number NTLUF4189NZTBG NTLUF4189NZTAG  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.5A, 4.5V 200mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3 nC @ 4.5 V 3 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 95 pF @ 15 V 95 pF @ 15 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-UDFN (1.6x1.6) 6-UDFN (1.6x1.6)
Package / Case 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad

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