NTLJS3180PZTBG
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onsemi NTLJS3180PZTBG

Manufacturer No:
NTLJS3180PZTBG
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
NTLJS3180PZTBG Datasheet
ECAD Model:
-
Description:
SMALL SIGNAL FIELD-EFFECT TRANSI
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:38mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
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Similar Products

Part Number NTLJS3180PZTBG NTLJS3180PZTAG  
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 38mOhm @ 3A, 4.5V 38mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.5 nC @ 4.5 V 19.5 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 16 V 1100 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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