onsemi-NTJS4160NT1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	60mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	2.75 nC @ 4.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	230 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	300mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-88/SC70-6/SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363

onsemi NTJS4160NT1G