NTJD4105CT1G
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onsemi NTJD4105CT1G

Manufacturer No:
NTJD4105CT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTJD4105CT1G Datasheet
ECAD Model:
-
Description:
MOSFET N/P-CH 20V/8V SOT-363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V, 8V
Current - Continuous Drain (Id) @ 25°C:630mA, 775mA
Rds On (Max) @ Id, Vgs:375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:46pF @ 20V
Power - Max:270mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number NTJD4105CT1G NTJD4105CT2G   NTJD4105CT4G  
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
FET Type N and P-Channel N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V, 8V 20V, 8V 20V, 8V
Current - Continuous Drain (Id) @ 25°C 630mA, 775mA 630mA, 775mA 630mA, 775mA
Rds On (Max) @ Id, Vgs 375mOhm @ 630mA, 4.5V 375mOhm @ 630mA, 4.5V 375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V 3nC @ 4.5V 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V 46pF @ 20V 46pF @ 20V
Power - Max 270mW 270mW 270mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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