NTHS5443T1G
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onsemi NTHS5443T1G

Manufacturer No:
NTHS5443T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTHS5443T1G Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 3.6A CHIPFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:65mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ChipFET™
Package / Case:8-SMD, Flat Lead
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In Stock

$0.27
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Similar Products

Part Number NTHS5443T1G NTHS5441T1G   NTHS5443T1  
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) 3.9A (Ta) 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 65mOhm @ 3.6A, 4.5V 46mOhm @ 3.9A, 4.5V 65mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA (Min) 1.2V @ 250µA 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 22 nC @ 4.5 V 12 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds - 710 pF @ 5 V -
FET Feature - - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package ChipFET™ ChipFET™ ChipFET™
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead

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