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| Part Number | NTHL080N120SC1 | NTHL080N120SC1A | NTH4L080N120SC1 | NTHL020N120SC1 | NTHL040N120SC1 |
|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | onsemi | onsemi | onsemi |
| Product Status | Active | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) | 31A (Tc) | 29A (Tc) | 103A (Tc) | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | 20V | 20V | 20V | 20V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V | 110mOhm @ 20A, 20V | 110mOhm @ 20A, 20V | 28mOhm @ 60A, 20V | 56mOhm @ 35A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA | 4.3V @ 5mA | 4.3V @ 5mA | 4.3V @ 20mA | 4.3V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 20 V | 56 nC @ 20 V | 56 nC @ 20 V | 203 nC @ 20 V | 106 nC @ 20 V |
| Vgs (Max) | +25V, -15V | +25V, -15V | +25V, -15V | +25V, -15V | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 800 V | 1670 pF @ 800 V | 1670 pF @ 800 V | 2890 pF @ 800 V | 1781 pF @ 800 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 348W (Tc) | 178W (Tc) | 170W (Tc) | 535W (Tc) | 348W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-4L | TO-247-3 | TO-247-3 |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-4 | TO-247-3 | TO-247-3 |
