onsemi-NTHD5903T1G - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	2.2A
Rds On (Max) @ Id, Vgs:	155mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id:	600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	-
Power - Max:	1.1W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	ChipFET™

onsemi NTHD5903T1G