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| Part Number | NTHD4N02FT1G | NTHD4P02FT1G | NTHD4N02FT1 |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | onsemi |
| Product Status | Obsolete | Active | Obsolete |
| FET Type | N-Channel | P-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | 20 V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tj) | 2.2A (Tj) | 2.9A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2.9A, 4.5V | 155mOhm @ 2.2A, 4.5V | 80mOhm @ 2.9A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | 1.2V @ 250µA | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V | 6 nC @ 4.5 V | 4 nC @ 4.5 V |
| Vgs (Max) | ±12V | ±12V | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 10 V | 300 pF @ 10 V | 300 pF @ 10 V |
| FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 910mW (Tj) | 1.1W (Tj) | 910mW (Tj) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | ChipFET™ | ChipFET™ | ChipFET™ |
| Package / Case | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead |
