onsemi-NTHD2110TT1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12 V
Current - Continuous Drain (Id) @ 25°C:	4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	40mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id:	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	14 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	1072 pF @ 6 V
FET Feature:	-
Power Dissipation (Max):	1.1W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	ChipFET™
Package / Case:	8-SMD, Flat Lead

onsemi NTHD2110TT1G