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| Part Number | NTH4L160N120SC1 | NTHL160N120SC1 |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 17.3A (Tc) | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | 20V |
| Rds On (Max) @ Id, Vgs | 224mOhm @ 12A, 20V | 224mOhm @ 12A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 2.5mA | 4.3V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 20 V | 34 nC @ 20 V |
| Vgs (Max) | +25V, -15V | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 665 pF @ 800 V | 665 pF @ 800 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 111W (Tc) | 119W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-247-4L | TO-247-3 |
| Package / Case | TO-247-4 | TO-247-3 |
