onsemi-NTH4L022N120M3S - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	18V
Rds On (Max) @ Id, Vgs:	30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id:	4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:	151 nC @ 18 V
Vgs (Max):	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	3175 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	352W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-4L
Package / Case:	TO-247-4

onsemi NTH4L022N120M3S