NTGS4111PT2G
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onsemi NTGS4111PT2G

Manufacturer No:
NTGS4111PT2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTGS4111PT2G Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 2.6A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:60mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):630mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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In Stock

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Similar Products

Part Number NTGS4111PT2G NTGS4111PT1G  
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 3.7A, 10V 60mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 15 V 750 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 630mW (Ta) 630mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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