onsemi-NTGS1135PT1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	8 V
Current - Continuous Drain (Id) @ 25°C:	4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Rds On (Max) @ Id, Vgs:	31mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id:	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	21 nC @ 4.5 V
Vgs (Max):	±6V
Input Capacitance (Ciss) (Max) @ Vds:	2200 pF @ 6 V
FET Feature:	-
Power Dissipation (Max):	970mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-TSOP
Package / Case:	SOT-23-6 Thin, TSOT-23-6

onsemi NTGS1135PT1G