onsemi-NTGD3149CT1G - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	3.2A, 2.4A
Rds On (Max) @ Id, Vgs:	60mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	387pF @ 10V
Power - Max:	900mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-TSOP

onsemi NTGD3149CT1G