onsemi-NTE4153NT1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	915mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	230mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	1.82 nC @ 4.5 V
Vgs (Max):	±6V
Input Capacitance (Ciss) (Max) @ Vds:	110 pF @ 16 V
FET Feature:	-
Power Dissipation (Max):	300mW (Tj)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-89-3
Package / Case:	SC-89, SOT-490

onsemi NTE4153NT1G