onsemi-NTE4151PT1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	760mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	360mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	2.1 nC @ 4.5 V
Vgs (Max):	±6V
Input Capacitance (Ciss) (Max) @ Vds:	156 pF @ 5 V
FET Feature:	-
Power Dissipation (Max):	313mW (Tj)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-89-3
Package / Case:	SC-89, SOT-490

onsemi NTE4151PT1G