NTD85N02R-1G
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onsemi NTD85N02R-1G

Manufacturer No:
NTD85N02R-1G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD85N02R-1G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 24V 12A/85A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):24 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17.7 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2050 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.25W (Ta), 78.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number NTD85N02R-1G NTD95N02R-1G  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 24 V 24 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 85A (Tc) 12A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 20A, 10V 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.7 nC @ 5 V 21 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 20 V 2400 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 1.25W (Ta), 78.1W (Tc) 1.25W (Ta), 86W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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