onsemi-NTD50N03R-35G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	7.8A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 11.5V
Rds On (Max) @ Id, Vgs:	12mOhm @ 30A, 11.5V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 11.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	750 pF @ 12 V
FET Feature:	-
Power Dissipation (Max):	1.5W (Ta), 50W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Stub Leads, IPak

onsemi NTD50N03R-35G