NTD4909N-35G
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onsemi NTD4909N-35G

Manufacturer No:
NTD4909N-35G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4909N-35G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 8.8A/41A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1314 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.37W (Ta), 29.4W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
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Similar Products

Part Number NTD4909N-35G NTD4909NA-35G   NTD4959N-35G   NTD4969N-35G   NTD4979N-35G   NTD4809N-35G   NTD4904N-35G   NTD4905N-35G   NTD4906N-35G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 41A (Tc) 8.8A (Ta), 41A (Tc) 9A (Ta), 58A (Tc) 9.4A (Ta), 41A (Tc) 9.4A (Ta), 41A (Tc) 9.6A (Ta), 58A (Tc) 13A (Ta), 79A (Tc) 12A (Ta), 67A (Tc) 10.3A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V 3.7mOhm @ 30A, 10V 4.5mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 10 V 17.5 nC @ 10 V 25 nC @ 11.5 V 9 nC @ 4.5 V 16.5 nC @ 10 V 13 nC @ 4.5 V 41 nC @ 10 V 33 nC @ 10 V 24 nC @ 10 V
Vgs (Max) ±20V - ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1314 pF @ 15 V 1314 pF @ 15 V 1456 pF @ 12 V 837 pF @ 15 V 837 pF @ 15 V 1456 pF @ 12 V 3052 pF @ 15 V 2340 pF @ 15 V 1932 pF @ 15 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 1.37W (Ta), 29.4W (Tc) - 1.3W (Ta), 52W (Tc) 1.38W (Ta), 26.3W (Tc) 1.38W (Ta), 26.3W (Tc) 1.4W (Ta), 52W (Tc) 1.4W (Ta), 52W (Tc) 1.4W (Ta), 44W (Tc) 1.38W (Ta), 37.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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