NTD4865N-1G
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onsemi NTD4865N-1G

Manufacturer No:
NTD4865N-1G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4865N-1G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 8.5A/44A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:827 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.27W (Ta), 33.3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Part Number NTD4865N-1G NTD5865N-1G   NTD4965N-1G   NTD4805N-1G   NTD4815N-1G   NTD4855N-1G   NTD4860N-1G   NTD4863N-1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 60 V 30 V 30 V 30 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 44A (Tc) 43A (Tc) 13A (Ta), 68A (Tc) 12.7A (Ta), 95A (Tc) 6.9A (Ta), 35A (Tc) 14A (Ta), 98A (Tc) 10.4A (Ta), 65A (Tc) 9.2A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V - 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.9mOhm @ 30A, 10V 18mOhm @ 20A, 10V 4.7mOhm @ 30A, 10V 5mOhm @ 30A, 10V 15mOhm @ 30A, 10V 4.3mOhm @ 30A, 10V 7.5mOhm @ 30A, 10V 9.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.8 nC @ 4.5 V 23 nC @ 10 V 17.2 nC @ 4.5 V 48 nC @ 11.5 V 6.6 nC @ 4.5 V 32.7 nC @ 4.5 V 16.5 nC @ 4.5 V 13.5 nC @ 4.5 V
Vgs (Max) ±20V ±20V - ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 827 pF @ 12 V 1261 pF @ 25 V 1710 pF @ 15 V 2865 pF @ 12 V 770 pF @ 12 V 2950 pF @ 12 V 1308 pF @ 12 V 990 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.27W (Ta), 33.3W (Tc) 71W (Tc) - 1.41W (Ta), 79W (Tc) 1.26W (Ta), 32.6W (Tc) 1.35W (Ta), 66.7W (Tc) 1.28W (Ta), 50W (Tc) 1.27W (Ta), 36.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK DPAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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