NTD4858N-35G
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onsemi NTD4858N-35G

Manufacturer No:
NTD4858N-35G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
NTD4858N-35G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 11.2A/73A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:11.2A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.2 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1563 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta), 54.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
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Similar Products

Part Number NTD4858N-35G NTD4858NA-35G   NTD4808N-35G   NTD4854N-35G   NTD4855N-35G   NTD4856N-35G   NTD4857N-35G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 30 V 25 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 11.2A (Ta), 73A (Tc) 11.2A (Ta), 73A (Tc) 10A (Ta), 63A (Tc) 15.7A (Ta), 128A (Tc) 14A (Ta), 98A (Tc) 13.3A (Ta), 89A (Tc) 12A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 30A, 10V 6.2mOhm @ 30A, 10V 8mOhm @ 30A, 10V 3.6mOhm @ 30A, 10V 4.3mOhm @ 30A, 10V 4.7mOhm @ 30A, 10V 5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.2 nC @ 4.5 V 19.2 nC @ 4.5 V 13 nC @ 4.5 V 49.2 nC @ 4.5 V 32.7 nC @ 4.5 V 27 nC @ 4.5 V 24 nC @ 4.5 V
Vgs (Max) ±20V - ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1563 pF @ 12 V 1563 pF @ 12 V 1538 pF @ 12 V 4600 pF @ 12 V 2950 pF @ 12 V 2241 pF @ 12 V 1960 pF @ 12 V
FET Feature - - - - - - -
Power Dissipation (Max) 1.3W (Ta), 54.5W (Tc) 1.3W (Ta), 54.5W (Tc) 1.4W (Ta), 54.6W (Tc) 1.43W (Ta), 93.75W (Tc) 1.35W (Ta), 66.7W (Tc) 1.33W (Ta), 60W (Tc) 1.31W (Ta), 56.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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