NTD4858N-1G
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onsemi NTD4858N-1G

Manufacturer No:
NTD4858N-1G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4858N-1G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 11.2A/73A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:11.2A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.2 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1563 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta), 54.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number NTD4858N-1G NTD4858NA-1G   NTD4808N-1G   NTD4854N-1G   NTD4855N-1G   NTD4856N-1G   NTD4857N-1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 30 V 25 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 11.2A (Ta), 73A (Tc) 11.2A (Ta), 73A (Tc) 10A (Ta), 63A (Tc) 15.7A (Ta), 128A (Tc) 14A (Ta), 98A (Tc) 13.3A (Ta), 89A (Tc) 12A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 30A, 10V 6.2mOhm @ 30A, 10V 8mOhm @ 30A, 10V 3.6mOhm @ 30A, 10V 4.3mOhm @ 30A, 10V 4.7mOhm @ 30A, 10V 5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.2 nC @ 4.5 V 19.2 nC @ 4.5 V 13 nC @ 4.5 V 49.2 nC @ 4.5 V 32.7 nC @ 4.5 V 27 nC @ 4.5 V 24 nC @ 4.5 V
Vgs (Max) ±20V - ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1563 pF @ 12 V 1563 pF @ 12 V 1538 pF @ 12 V 4600 pF @ 12 V 2950 pF @ 12 V 2241 pF @ 12 V 1960 pF @ 12 V
FET Feature - - - - - - -
Power Dissipation (Max) 1.3W (Ta), 54.5W (Tc) 1.3W (Ta), 54.5W (Tc) 1.4W (Ta), 54.6W (Tc) 1.43W (Ta), 93.75W (Tc) 1.35W (Ta), 66.7W (Tc) 1.33W (Ta), 60W (Tc) 1.31W (Ta), 56.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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