NTD4855N-35G
  • Share:

onsemi NTD4855N-35G

Manufacturer No:
NTD4855N-35G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4855N-35G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 14A/98A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2950 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.35W (Ta), 66.7W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
0 Remaining View Similar

In Stock

$0.33
1,004

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTD4855N-35G NTD4858N-35G   NTD4856N-35G   NTD4857N-35G   NTD4865N-35G   NTD4805N-35G   NTD4815N-35G   NTD4854N-35G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 25 V 25 V 30 V 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 98A (Tc) 11.2A (Ta), 73A (Tc) 13.3A (Ta), 89A (Tc) 12A (Ta), 78A (Tc) 8.5A (Ta), 44A (Tc) 12.7A (Ta), 95A (Tc) 6.9A (Ta), 35A (Tc) 15.7A (Ta), 128A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 30A, 10V 6.2mOhm @ 30A, 10V 4.7mOhm @ 30A, 10V 5.7mOhm @ 30A, 10V 10.9mOhm @ 30A, 10V 5mOhm @ 30A, 10V 15mOhm @ 30A, 10V 3.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32.7 nC @ 4.5 V 19.2 nC @ 4.5 V 27 nC @ 4.5 V 24 nC @ 4.5 V 10.8 nC @ 4.5 V 48 nC @ 11.5 V 14.1 nC @ 11.5 V 49.2 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 12 V 1563 pF @ 12 V 2241 pF @ 12 V 1960 pF @ 12 V 827 pF @ 12 V 2865 pF @ 12 V 770 pF @ 12 V 4600 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.35W (Ta), 66.7W (Tc) 1.3W (Ta), 54.5W (Tc) 1.33W (Ta), 60W (Tc) 1.31W (Ta), 56.6W (Tc) 1.27W (Ta), 33.3W (Tc) 1.41W (Ta), 79W (Tc) 1.26W (Ta), 32.6W (Tc) 1.43W (Ta), 93.75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

Related Product By Categories

DMP22D6UT-7
DMP22D6UT-7
Diodes Incorporated
MOSFET P-CH 20V 430MA SOT523
2SK3702
2SK3702
Sanyo
FOR 60V MOTOR DRIVERS
IPB60R190C6ATMA1
IPB60R190C6ATMA1
Infineon Technologies
MOSFET N-CH 600V 20.2A D2PAK
TPH1R204PL1,LQ
TPH1R204PL1,LQ
Toshiba Semiconductor and Storage
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
SI7115DN-T1-GE3
SI7115DN-T1-GE3
Vishay Siliconix
MOSFET P-CH 150V 8.9A PPAK1212-8
IRFB4710PBF
IRFB4710PBF
Infineon Technologies
MOSFET N-CH 100V 75A TO220AB
TK3P50D,RQ(S
TK3P50D,RQ(S
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 3A DPAK
BSS123LT1
BSS123LT1
onsemi
MOSFET N-CH 100V 170MA SOT-23
DMP2225L-7
DMP2225L-7
Diodes Incorporated
MOSFET P-CH 20V 2.6A SOT23-3
SI6410DQ-T1-GE3
SI6410DQ-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 8TSSOP
IPD60R520CPBTMA1
IPD60R520CPBTMA1
Infineon Technologies
MOSFET N-CH 600V 6.8A TO252-3
PHU66NQ03LT,127
PHU66NQ03LT,127
NXP USA Inc.
MOSFET N-CH 25V 66A IPAK

Related Product By Brand

PZT751T1G
PZT751T1G
onsemi
TRANS PNP 60V 2A SOT223
2N5401RLRMG
2N5401RLRMG
onsemi
TRANS PNP 150V 0.6A TO92
NSVMMUN2235LT1G
NSVMMUN2235LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
FJX4011RTF
FJX4011RTF
onsemi
TRANS PREBIAS PNP 200MW SOT323
MC100LVEP14DTR2G
MC100LVEP14DTR2G
onsemi
IC CLK BUFFER 2:5 2.5GHZ 20TSSOP
MC100EL1648DT
MC100EL1648DT
onsemi
IC OSC VCO 1.1GHZ 8TSSOP
74ACTQ244MSA
74ACTQ244MSA
onsemi
IC BUF NON-INVERT 5.5V 20SSOP
SN74LS258BD
SN74LS258BD
onsemi
IC MULTIPLEXER 4 X 2:1 16SOIC
7SB384DTT1G
7SB384DTT1G
onsemi
IC BUS SWITCH 1 X 1:1 5TSOP
NM93C66M8
NM93C66M8
onsemi
IC EEPROM 4KBIT SPI 1MHZ 8SO
MC78L08ACD
MC78L08ACD
onsemi
IC REG LINEAR 8V 100MA 8SOIC
MOC207R1VM
MOC207R1VM
onsemi
OPTOISO 2.5KV TRANS W/BASE 8SOIC