NTD4855N-1G
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onsemi NTD4855N-1G

Manufacturer No:
NTD4855N-1G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4855N-1G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 14A/98A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2950 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.35W (Ta), 66.7W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number NTD4855N-1G NTD4856N-1G   NTD4857N-1G   NTD4858N-1G   NTD4865N-1G   NTD4805N-1G   NTD4815N-1G   NTD4854N-1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 25 V 25 V 30 V 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 98A (Tc) 13.3A (Ta), 89A (Tc) 12A (Ta), 78A (Tc) 11.2A (Ta), 73A (Tc) 8.5A (Ta), 44A (Tc) 12.7A (Ta), 95A (Tc) 6.9A (Ta), 35A (Tc) 15.7A (Ta), 128A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 30A, 10V 4.7mOhm @ 30A, 10V 5.7mOhm @ 30A, 10V 6.2mOhm @ 30A, 10V 10.9mOhm @ 30A, 10V 5mOhm @ 30A, 10V 15mOhm @ 30A, 10V 3.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32.7 nC @ 4.5 V 27 nC @ 4.5 V 24 nC @ 4.5 V 19.2 nC @ 4.5 V 10.8 nC @ 4.5 V 48 nC @ 11.5 V 6.6 nC @ 4.5 V 49.2 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 12 V 2241 pF @ 12 V 1960 pF @ 12 V 1563 pF @ 12 V 827 pF @ 12 V 2865 pF @ 12 V 770 pF @ 12 V 4600 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.35W (Ta), 66.7W (Tc) 1.33W (Ta), 60W (Tc) 1.31W (Ta), 56.6W (Tc) 1.3W (Ta), 54.5W (Tc) 1.27W (Ta), 33.3W (Tc) 1.41W (Ta), 79W (Tc) 1.26W (Ta), 32.6W (Tc) 1.43W (Ta), 93.75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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