NTD4813N-35G
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onsemi NTD4813N-35G

Manufacturer No:
NTD4813N-35G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4813N-35G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 7.6A/40A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:13mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.9 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.27W (Ta), 35.3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
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Part Number NTD4813N-35G NTD4815N-35G   NTD4813NH-35G   NTD4863N-35G   NTD4913N-35G   NTD3813N-35G   NTD4810N-35G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 25 V 30 V 16 V 30 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 40A (Tc) 6.9A (Ta), 35A (Tc) 7.6A (Ta), 40A (Tc) 9.2A (Ta), 49A (Tc) 7.7A (Ta), 32A (Tc) 9.6A (Ta), 51A (Tc) 9A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 13mOhm @ 30A, 10V 15mOhm @ 30A, 10V 13mOhm @ 30A, 10V 9.3mOhm @ 30A, 10V 10.5mOhm @ 30A, 10V 8.75mOhm @ 15A, 10V 10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.9 nC @ 4.5 V 14.1 nC @ 11.5 V 10 nC @ 4.5 V 13.5 nC @ 4.5 V 13 nC @ 10 V 12.8 nC @ 4.5 V 11 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 12 V 770 pF @ 12 V 940 pF @ 12 V 990 pF @ 12 V 1013 pF @ 15 V 963 pF @ 12 V 1350 pF @ 12 V
FET Feature - - - - - - -
Power Dissipation (Max) 1.27W (Ta), 35.3W (Tc) 1.26W (Ta), 32.6W (Tc) 1.27W (Ta), 35.3W (Tc) 1.27W (Ta), 36.6W (Tc) 1.36W (Ta), 24W (Tc) 1.2W (Ta), 34.9W (Tc) 1.4W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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